AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
MRF21085LR3 MRF21085LSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
(continued)
Two--Tone Common--Source Amplifier Power Gain
(VDD
=28Vdc,Pout
= 90 W PEP, IDQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
?
13.6
?
dB
Two--Tone Drain Efficiency
(VDD
=28Vdc,Pout
= 90 W PEP, IDQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
?
36
?
%
Two--Tone Intermodulation Distortion
(VDD
=28Vdc,Pout
= 90 W PEP, IDQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
?
-- 3 1
?
dBc
Input Return Loss
(VDD
=28Vdc,Pout
= 90 W PEP, IDQ
= 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
?
-- 1 2
?
dB
Pout, 1 dB Compression Point
(VDD
=28Vdc,IDQ
= 1000 mA, f = 2170 MHz)
P1dB
?
100
?
W